small signal transistor arrays 1 publication date: march 2004 sjk00049bed una0228 (UN228) silicon pnp epitaxial planar type (2 elements) silicon npn epitaxial planar type (2 elements) for motor drives features ? small and lightweight ? low power consumption ? low voltage drive ? with 4 elements incorporated absolute maximum ratings t a = 25 c marking symbol: UN228 internal connection note) * : when the dissipation on one device is t c = 25 c 9 10 8 7 6 5 4 3 2 1 parameter symbol rating unit pnp collector-base voltage v cbo ? 12 v (emitter open) collector-emitter voltage v ceo ? 10 v (base open) emitter-base voltage v ebo ? 7v (collector open) collector current i c ? 1a peak collector current i cp ? 2.5 a npn collector-base voltage v cbo 12 v (emitter open) collector-emitter voltage v ceo 10 v (base open) emitter-base voltage v ebo 7v (collector open) collector current i c 1a peak collector current i cp 2.5 a overall total power dissipation * p t 0.5 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm 1: emitter 2: base 3: collector 4: base 5: emitter 6: emitter 7: base 8: collector 9: base 10: emitter so10-g1 package 12 45 0.2 +0.1 ?0.0 0.5 0.5 0.2 6 7 8 9 10 5 4 3 2 1 0.4 0.1 1.5 0.1 1.5 +0.2 ?0.1 0.8 12 0.9 0.1 5.5 0.3 7.7 0.3 6.5 0.3 note) the part number in the parenthesis shows conventional part number.
una0228 2 sjk00049bed electrical characteristics t a = 25 c 3 c ? pnp ? npn parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 12 v collector-emitter voltage (base open) v ceo i c = ? 1 ma, i b = 0 ? 10 v emitter -base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 7v collector-base cutoff current (emitter open) i cbo v cb = ? 10 v, i e = 0 ? 1 a forward current transfer ratio * 1 h fe v ce = ? 1 v, i c = ? 0.5 a 200 800 ? collector-emitter saturation voltage * 1 v ce(sat) i c = ? 1 a, i b = ? 30 ma ? 0.2 ? 0.3 v transition frequency f t v cb = ? 6 v, i e = 50 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 65 pf (common base, input open circuited) forward voltage * 2 v f i f = ? 1 a ? 1.5 v parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 012v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 010v emitter -base voltage (collector open) v ebo i e = 10 a, i c = 07v collector-base cutoff current (emitter open) i cbo v cb = 10 v, i e = 01 a forward current transfer ratio * 1 h fe v ce = 1 v, i c = 0.5 a 200 800 ? collector-emitter saturation voltage * 1 v ce(sat) i c = 1 a, i b = 30 ma 0.2 0.3 v transition frequency f t v cb = 6 v, i e = ? 50 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 50 pf (common base, input open circuited) forward voltage * 2 v f i f = 1 a 1.5 v note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: application to the built-in diode
una0228 3 sjk00049bed characteristics charts of pnp transistor block i c ? v ce i c ? v be v ce(sat) ? i c h fe ? i c c ob ? v cb ? 2 0 ? 4 ? 6 ? 8 ? 10 ? 12 0 ? 0.8 ? 1.6 ? 2.4 ? 3.2 ? 4.0 ? 4.8 t a = 25 c ? 8 ma ? 10 ma ? 12 ma ? 6 ma ? 2 ma ? 4 ma i b = ? 14 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) ? 1 ?2 ? 3 ? 4 ? 5 ? 6 ? 0.4 0 ? 0.8 ? 1.2 ? 1.6 ? 2.0 ? 2.4 0 v ce = ? 1 v 25 c ? 25 c t a = 75 c base-emitter voltage v be ( v ) collector current i c ( a ) ? 0.01 ? 0.1 ? 1 ? 10 ? 10 ? 3 ? 10 i c / i b = 100/3 ? 10 ? 2 ? 10 ? 1 ? 1 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0 100 200 300 400 500 600 v ce = ? 1 v ? 0.01 ? 0.1 ? 1 ? 10 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( a ) 0 40 80 120 160 200 240 ? 0.1 ? 1 ? 10 ? 100 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v ) common characteristics chart p t ? t a 0 40 80 120 160 0 0.1 0.2 0.3 0.4 0.5 0.6 total power dissipation p t ( w ) ambient temperature t a ( c )
una0228 4 sjk00049bed characteristics charts of npn transistor block i c ? v ce i c ? v be v ce(sat) ? i c h fe ? i c c ob ? v cb 2 0 4 6 8 10 12 0 0.8 1.6 2.4 3.2 4.0 4.8 t a = 25 c 12 ma 10 ma 8 ma 6 ma 2 ma 4 ma i b = 14 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) 0.4 0 0.8 1.2 1.6 2.0 2.4 0 1 2 3 4 5 6 v ce = 1 v ? 25 c t a = 75 c 25 c base-emitter voltage v be ( v ) collector current i c ( a ) 10 ? 3 10 i c / i b = 100/3 10 ? 2 10 ? 1 1 0.01 0.1 1 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0 100 200 300 400 500 600 v ce = 1 v 0.01 0.1 1 10 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( a ) 0 20 40 60 80 100 120 0.1 1 10 100 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v )
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